Solutions for delicate challenges on the nanoscale
Thin film deposition processes for semiconductor manufacturing
Nanoscale charge transfer membrane
Optimized plasma pulse time of SiO₂ ALD (atomic layer deposition) process to improve the preservation yield of molecular wires (PV3) embedded in an uniform insulating SiO₂ layer (2 nm)
Tubular catalyst support
CVD (chemical vapor deposition) of nitrogen-containing carbon precursor on AAO (anodic aluminum oxide) and hot pressing on Nafion substrate yields vertically aligned carbon tubes upon etching of the AAO matrix
Template-based preparation of nanostructures
Copper nanowires chip interconnects
Electroplating of Cu in the pores (300 nm) of PCTE (polycarbonate track etched) membrane onto a copper base substrate. The removal of the PCTE steps releases the copper nanowires.
Flexible interconnected porous carbon films
Pore engineering with soft templates allows burn off of the templating agent during carbonization and simplifies conventional hard template processes